Structure of interfaces in GaN/AlN and Ge/Si multilayered heterosystems by XAFS spectroscopy
نویسندگان
چکیده
منابع مشابه
Local structure of Ge/Si nanostructures: Uniqueness of XAFS spectroscopy
A discussion of the limitations of Raman scattering as applied to Ge/Si nanostructures is followed by a summary of our recent efforts to investigate the local structure of various Ge nanostructures, namely, Ge quantum dots MBE grown on bare Si(1 0 0), on Si(1 1 1) with a 0.3 nm SiO2 coverage, and nanocrystals embedded in SiO2, by X-ray absorption fine structure spectroscopy. For the latter case...
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X-ray absorption spectroscopy (XAS) refers to the details of how X-rays are absorbed by an atom at energies near and above the core-level binding energies of that particular atom. The absorption of X-rays on the high energy side of absorption edges does not vary monotonically in condensed matter but has a complicated behavior which extends past the edge up to about ~1 keV. This non-monotonic va...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2016
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/774/1/012128